IndiumV3, Main, Repository, bibRecord, 000055

Post-treatment effects on ZnS(O,OH)/Cu(In,Ga)Se2 solar cells deposited using thioacetamide-ammonia based solution

Identifieur interne : 000055 ( Main/Repository ); précédent : 000054; suivant : 000056

Post-treatment effects on ZnS(O,OH)/Cu(In,Ga)Se2 solar cells deposited using thioacetamide-ammonia based solution

Auteurs : RBID : Pascal:14-0084058

Descripteurs français

Pascal (Inist)
- Cellule solaire, Recuit, Traitement thermique, Eclairement, Evaluation performance, Couche tampon, Dépôt bain chimique, Etude comparative, Thiourée, Dépôt chimique phase vapeur, Méthode MOCVD, Endommagement, Pulvérisation irradiation, Bande conduction, Discontinuité bande, Spectre photoélectron RX, Spectrométrie photoélectron, Sulfure de zinc, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Ammoniac, Oxyde de zinc, ZnS, Cu(In,Ga)Se2, ZnO, Couche fenêtre.

English descriptors

KwdEn :
- Ammonia, Annealing, Band offset, Buffer layer, Chemical bath deposition, Chemical vapor deposition, Comparative study, Conduction band, Copper selenides, Damaging, Gallium selenides, Heat treatment, Illumination, Indium selenides, MOCVD, Performance evaluation, Photoelectron spectrometry, Quaternary compound, Solar cell, Sputtering, Thiourea, Window layer, X-ray photoelectron spectra, Zinc oxide, Zinc sulfide.

Abstract

The impact of post-treatments such as annealing, light-soaking and heat-light soaking on film properties and cell performance of ZnS(O,OH)/Cu(In,Ga)Se₂ solar cells were investigated, when ZnS(O,OH) buffer layer was deposited using a thioacetamide (TAA)-ammonia based chemical solution. Chemical bath deposition (CBD) time was shortened to one seventh by combination of a thinner buffer layer and TAA-ammonia based high-rate CBD, as compared to conventional thiourea (TU)-ammonia based CBD process. The ZnO:B window layer was deposited by metal organic chemical vapor deposition (MOCVD) in order to avoid plasma-damage during subsequent sputtering process. An optimum CIGS solar cell fabricated using 50 nm-thick ZnS(O,OH) buffer layer yielded a total area efficiency of 18.8% after heat-light soaking treatment for 80 min at 130 C under AM1.5, 100 mW/cm² illumination. The influence of post-treatments on the compositional changes of the ZnS(O,OH) buffer layer, which affect the conduction band offset (CBO) at the CIGS/ZnS(O,OH) interface, are also discussed on the basis of X-ray photoelectron spectroscopy(XPS) analysis.

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Links to Exploration step

Pascal:14-0084058

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Post-treatment effects on ZnS(O,OH)/Cu(In,Ga)Se<sub>2</sub>
 solar cells deposited using thioacetamide-ammonia based solution</title>
<author><name sortKey="Kobayashi, Taizo" uniqKey="Kobayashi T">Taizo Kobayashi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute for Science & Technology, Photovoltaic Science and Technology Research Division, Tokyo University of Science, SIC-2-206, 5-4-30 Nishihashimoto</s1>
<s2>Sagamihara, Kanagawa 252-0131</s2>
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<country>Japon</country>
<wicri:noRegion>Sagamihara, Kanagawa 252-0131</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kumazawa, Toyokazu" uniqKey="Kumazawa T">Toyokazu Kumazawa</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe</s1>
<s2>Sagamihara, Kanagawa 229-8558</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Sagamihara, Kanagawa 229-8558</wicri:noRegion>
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</author>
<author><name>ZACHARIE JEHL LI KAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute for Science & Technology, Photovoltaic Science and Technology Research Division, Tokyo University of Science, SIC-2-206, 5-4-30 Nishihashimoto</s1>
<s2>Sagamihara, Kanagawa 252-0131</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Sagamihara, Kanagawa 252-0131</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Nakada, Tokio" uniqKey="Nakada T">Tokio Nakada</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute for Science & Technology, Photovoltaic Science and Technology Research Division, Tokyo University of Science, SIC-2-206, 5-4-30 Nishihashimoto</s1>
<s2>Sagamihara, Kanagawa 252-0131</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Sagamihara, Kanagawa 252-0131</wicri:noRegion>
</affiliation>
</author>
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<publicationStmt><idno type="inist">14-0084058</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0084058 INIST</idno>
<idno type="RBID">Pascal:14-0084058</idno>
<idno type="wicri:Area/Main/Corpus">000097</idno>
<idno type="wicri:Area/Main/Repository">000055</idno>
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<seriesStmt><idno type="ISSN">0927-0248</idno>
<title level="j" type="abbreviated">Sol. energy mater. sol. cells</title>
<title level="j" type="main">Solar energy materials and solar cells</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ammonia</term>
<term>Annealing</term>
<term>Band offset</term>
<term>Buffer layer</term>
<term>Chemical bath deposition</term>
<term>Chemical vapor deposition</term>
<term>Comparative study</term>
<term>Conduction band</term>
<term>Copper selenides</term>
<term>Damaging</term>
<term>Gallium selenides</term>
<term>Heat treatment</term>
<term>Illumination</term>
<term>Indium selenides</term>
<term>MOCVD</term>
<term>Performance evaluation</term>
<term>Photoelectron spectrometry</term>
<term>Quaternary compound</term>
<term>Solar cell</term>
<term>Sputtering</term>
<term>Thiourea</term>
<term>Window layer</term>
<term>X-ray photoelectron spectra</term>
<term>Zinc oxide</term>
<term>Zinc sulfide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term>
<term>Recuit</term>
<term>Traitement thermique</term>
<term>Eclairement</term>
<term>Evaluation performance</term>
<term>Couche tampon</term>
<term>Dépôt bain chimique</term>
<term>Etude comparative</term>
<term>Thiourée</term>
<term>Dépôt chimique phase vapeur</term>
<term>Méthode MOCVD</term>
<term>Endommagement</term>
<term>Pulvérisation irradiation</term>
<term>Bande conduction</term>
<term>Discontinuité bande</term>
<term>Spectre photoélectron RX</term>
<term>Spectrométrie photoélectron</term>
<term>Sulfure de zinc</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Composé quaternaire</term>
<term>Ammoniac</term>
<term>Oxyde de zinc</term>
<term>ZnS</term>
<term>Cu(In,Ga)Se2</term>
<term>ZnO</term>
<term>Couche fenêtre</term>
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<front><div type="abstract" xml:lang="en">The impact of post-treatments such as annealing, light-soaking and heat-light soaking on film properties and cell performance of ZnS(O,OH)/Cu(In,Ga)Se<sub>2</sub>
 solar cells were investigated, when ZnS(O,OH) buffer layer was deposited using a thioacetamide (TAA)-ammonia based chemical solution. Chemical bath deposition (CBD) time was shortened to one seventh by combination of a thinner buffer layer and TAA-ammonia based high-rate CBD, as compared to conventional thiourea (TU)-ammonia based CBD process. The ZnO:B window layer was deposited by metal organic chemical vapor deposition (MOCVD) in order to avoid plasma-damage during subsequent sputtering process. An optimum CIGS solar cell fabricated using 50 nm-thick ZnS(O,OH) buffer layer yielded a total area efficiency of 18.8% after heat-light soaking treatment for 80 min at 130 C under AM1.5, 100 mW/cm<sup>2</sup>
 illumination. The influence of post-treatments on the compositional changes of the ZnS(O,OH) buffer layer, which affect the conduction band offset (CBO) at the CIGS/ZnS(O,OH) interface, are also discussed on the basis of X-ray photoelectron spectroscopy(XPS) analysis.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Post-treatment effects on ZnS(O,OH)/Cu(In,Ga)Se<sub>2</sub>
 solar cells deposited using thioacetamide-ammonia based solution</s1>
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<fA11 i1="01" i2="1"><s1>KOBAYASHI (Taizo)</s1>
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<fA11 i1="02" i2="1"><s1>KUMAZAWA (Toyokazu)</s1>
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<fA11 i1="03" i2="1"><s1>ZACHARIE JEHL LI KAO</s1>
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<fA11 i1="04" i2="1"><s1>NAKADA (Tokio)</s1>
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<fA14 i1="01"><s1>Research Institute for Science & Technology, Photovoltaic Science and Technology Research Division, Tokyo University of Science, SIC-2-206, 5-4-30 Nishihashimoto</s1>
<s2>Sagamihara, Kanagawa 252-0131</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe</s1>
<s2>Sagamihara, Kanagawa 229-8558</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>The impact of post-treatments such as annealing, light-soaking and heat-light soaking on film properties and cell performance of ZnS(O,OH)/Cu(In,Ga)Se<sub>2</sub>
 solar cells were investigated, when ZnS(O,OH) buffer layer was deposited using a thioacetamide (TAA)-ammonia based chemical solution. Chemical bath deposition (CBD) time was shortened to one seventh by combination of a thinner buffer layer and TAA-ammonia based high-rate CBD, as compared to conventional thiourea (TU)-ammonia based CBD process. The ZnO:B window layer was deposited by metal organic chemical vapor deposition (MOCVD) in order to avoid plasma-damage during subsequent sputtering process. An optimum CIGS solar cell fabricated using 50 nm-thick ZnS(O,OH) buffer layer yielded a total area efficiency of 18.8% after heat-light soaking treatment for 80 min at 130 C under AM1.5, 100 mW/cm<sup>2</sup>
 illumination. The influence of post-treatments on the compositional changes of the ZnS(O,OH) buffer layer, which affect the conduction band offset (CBO) at the CIGS/ZnS(O,OH) interface, are also discussed on the basis of X-ray photoelectron spectroscopy(XPS) analysis.</s0>
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<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<fC03 i1="02" i2="X" l="ENG"><s0>Annealing</s0>
<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
</fC03>
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<s5>04</s5>
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<fC03 i1="04" i2="X" l="SPA"><s0>Alumbrado</s0>
<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<fC03 i1="06" i2="X" l="ENG"><s0>Buffer layer</s0>
<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Tiourea</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Dépôt chimique phase vapeur</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Chemical vapor deposition</s0>
<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
</fC03>
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<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Endommagement</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Damaging</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Deterioración</s0>
<s5>12</s5>
</fC03>
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<s5>13</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s5>15</s5>
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<s5>15</s5>
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<s5>15</s5>
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<s5>22</s5>
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<s5>22</s5>
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<s5>22</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>Séléniure de cuivre</s0>
<s2>NK</s2>
<s5>23</s5>
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<fC03 i1="19" i2="3" l="ENG"><s0>Copper selenides</s0>
<s2>NK</s2>
<s5>23</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>Séléniure de gallium</s0>
<s2>NK</s2>
<s5>24</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Gallium selenides</s0>
<s2>NK</s2>
<s5>24</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>25</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>25</s5>
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<s5>26</s5>
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<s5>26</s5>
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<s5>26</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Ammoniac</s0>
<s2>NK</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>Ammonia</s0>
<s2>NK</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Amoníaco</s0>
<s2>NK</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>28</s5>
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<fC03 i1="24" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>28</s5>
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<s5>28</s5>
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<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>ZnO</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE"><s0>Couche fenêtre</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="28" i2="X" l="ENG"><s0>Window layer</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
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   |texte=   Post-treatment effects on ZnS(O,OH)/Cu(In,Ga)Se2 solar cells deposited using thioacetamide-ammonia based solution
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Post-treatment effects on ZnS(O,OH)/Cu(In,Ga)Se2 solar cells deposited using thioacetamide-ammonia based solution

Post-treatment effects on ZnS(O,OH)/Cu(In,Ga)Se2 solar cells deposited using thioacetamide-ammonia based solution

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